BAS316 200mw high voltage smd switching diode small signal diode ? fast switching device(t rr <4.0ns) ? surface device type mounting ? moisture sensitivity level 1 ? matte tin(sn) lead finish ? pb free version, rohs compliant min max min max ? case : flat lead sod-323 small outline plastic package 1.20 1.40 0.047 0.055 2.50 2.70 0.098 0.106 0.25 0.35 0.010 0.014 1.60 1.80 0.063 0.071 0.80 0.90 0.031 0.035 0.08 0.15 0.003 0.006 package sod-323 sod-323 maximum ratings 1 usec 1 msec suggested pad layout a g ordering information part no. packing 0.19 ref 0.475 ref e c f sod-323 maximum ratings and electrical characteristics features mechanical data ? terminal: matte tin plated, lead free., solderable per mil-std-202, method 208 guaranteed unit (mm) unit (inch) dimensions b t j , t stg 200 ? green compound (halogen free) with suffix "g" on packing code and prefix "g" on date code ? high temperature soldering guaranteed: 260 c/10s BAS316 rr 3kpcs / 7" reel d ? polarity : indicated by cathode band ? weight : 4.850.5 mg ? marking code : a6 1.0 ma a power dissipation rating at 25 c ambient temperature unless otherwise specified. pin configuration non-repetitive peak forward surge current pulse width= 250 4.0 BAS316 rrg 3kpcs / 7" reel units value symbol type number i fsm junction and storage temperature range mean forward current mw i o p d pulse width= c -65 to + 150 1.22 0.048 2.36 0.093 0.91 0.036 0.165 4.19 version : a10
BAS316 200mw high voltage smd switching diode small signal diode electrical characteristics i r = 100 ua i f = 1.0 ma i f = 10 ma i f = 50 ma i f = 150 ma v r = 75 v v r = 25 v junction capacitance v r = reverse recovery time i f =i r = tape & reel specification v (br) units max type number v symbol 100 - min 3.94 0.10 reverse breakdown voltage 0.62 v f i r forward voltage reverse leakage voltage 0.715 feed hole width d2 13.0 0.20 item symbol dimension carrier depth c 1.50 0.10 1.85 0.10 d1 55 min sprocket hole 1.5 0.1 4.00 0.10 178 1 carrier width a reel outside diameter d d carrier length b reel inner diameter 8.00 0.20 e 1.75 0.10 punch hole position f 3.50 0.05 sprocke hole pitch embossment center sprocke hole position p0 reel width w1 14.4 max p1 2.00 0.05 overall tape thickness t 0.23 0.05 tape width w - - - - 0.855 1.000 1.250 1.00 v ua pf ns 10ma, r l =100 ? 0, f=1.0mhz 0.03 1.5 4.0 c j trr - - t op co v e r t ape carieer tape a ny additional label (if required ) tsc label t c d p 1 p 0 a b f w w1 d 1 d 2 d version : a10
BAS316 200mw high voltage smd switching diode small signal diode rating and characteristic curves fig 1 typical forward characteristics 0.001 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 instantaneous forward current (a) fig 3 admissible power dissipation curve 0 50 100 150 200 250 0 25 50 75 100 125 150 175 power dissipation (mw) fig 4 typical junction capacitance 0 0.3 0.6 0.9 1.2 1.5 0246810121416 junction capacitance (pf) ambient temperature (c) reverse voltage (v) ta=25c fig 2 reverse current vs reverse voltage 0.01 0.1 1 10 100 0 20406080100120 reverse current (ua) reverse voltage (v) ta=25c instantaneous forward voltage (v) version : a10
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